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PD- 91647C
IRF7523D1
FETKY ? MOSFET / Schottky Diode
q
Co-packaged HEXFET ? Power MOSFET
and Schottky Diode
A
1
8
K
V DSS = 30V
q
N-Channel HEXFET
A
2
7
K
q
q
q
Low V F Schottky Rectifier
Generation 5 Technology
Micro8 TM Footprint
S
G
3
4
6
5
D
D
R DS(on) = 0.11 ?
Schottky Vf = 0.39V
Description
T op V ie w
The FETKY TM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
the smallest footprint available in an SOIC outline. This makes the Micro8
profile (<1.1mm) of the Micro8
The new Micro8 TM package, with half the footprint area of the standard SO-8, provides
TM
an ideal
device for applications where printed circuit board space is at a premium. The low
TM
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T A = 25°C unless otherwise noted)
Micro8
TM
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @10V ?
Pulsed Drain Current ?
Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
2.7
2.1
21
1.25
0.8
10
± 20
6.2
-55 to +150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
100
°C/W
Notes:
? Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
? I SD ≤ 1.7A, di/dt ≤ 120A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%
? When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
3/17/99
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